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91.
光电变色器件用纳米晶氧化钛薄膜的微结构与特性 总被引:2,自引:2,他引:0
纳米晶TiO2薄膜在光电变色器件中具有很重要的作用。它的微结构直接影响染料的吸附、光的散射以及电荷输运的特性。因此,探索TiO2薄膜的微结构(如粒径、表面形貌和厚度等)及光电性能是非常有意义的。采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜,利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。从理论上研究和讨论了纳米晶TiO2薄膜晶粒尺寸对光电性能的影响,并用量子限制效应解释了吸收光谱峰值波长随粒径减小而发生蓝移的现象。 相似文献
92.
93.
Charging of the surface of an oxide caused by the adsorption of hydrogen ions and ions of inert 1:1 electrolyte was investigated by using grand canonical Monte Carlo simulation technique. In particular, adsorption isotherms of protons as well as of ions of the electrolyte together with the resulting charge density of the surface were obtained for different system parameters. Also, the effect of the surface energetic heterogeneity and the concentration of the background electrolyte on the isotherms and the charge density curves was examined. Furthermore, lateral interactions in the mixed adsorbed phase were taken into account in the modeling of the system behavior. The obtained results, in general, suggest that the three factors mentioned above may have substantial influence on the charging mechanism at the liquid/oxide interface. 相似文献
94.
Ismail Boz Gulin Selda Pozan Mehmet Ali Gürkaynak 《Reaction Kinetics and Catalysis Letters》2004,83(1):137-146
Bimetallic Cu/Mg, Ca, Ba mixed oxide compounds acted as catalyst in the dehydrogenation of tetradecanol into tetradecanal,
and were characterized by thermal gravimetric analysis, surface area, X-ray diffraction, temperature-programmed reduction
and desorption of CO2. Alkaline earth oxides increased the total basic site concentration in the order of Mg>Ca>Ba. A correlation was found between
the total basic site concentration and initial dehydrogenation rate.
This revised version was published online in June 2006 with corrections to the Cover Date. 相似文献
95.
A.A. Dakhel 《Journal of Physics and Chemistry of Solids》2004,65(11):1765-1771
Thin Eu-In solid solution oxide films (SS) were grown on Si (P) substrates to form MOS devices. The samples were characterised by X-ray fluorescence and X-ray diffraction techniques. The ac-conductance and capacitance of the devices were studied as a function of frequency in the range 500 Hz to 100 kHz, temperature in the range 293-400 K and gate voltage. The investigation established that: (1) the prepared SS exhibit a sudden reversible structural change at about 370 K, (2) the frequency dependence for f>10 kHz of the ac-conductivity and capacitance of the insulator at room temperature is controlled by the ‘corrected barrier hopping’ CBH model, (3) the temperature dependence of the ac-conductance which shows a small activation energy characterises the hopping process of current carriers between equilibrium sites, and (4) the prepared transparent SS have a sufficiently high relative permittivity ?, around 30, which suggests they are promising candidates for high-? dielectric applications. 相似文献
96.
Benedict Ita P. Murugavel V. Ponnambalam A. R. Raju 《Journal of Chemical Sciences》2003,115(5-6):519-524
Fine powders of lanthanum iron oxide, LaFeO3, have been prepared by solid state reaction as well as sol-gel synthesis and nebulized spray pyrolysis. Structures, morphologies
and magnetic susceptibility measurements of these powders have been examined. The powders prepared by all the three low-temperature
routes contain nearly spherical particles with an average diameter of 40 nm. These samples show a lower Neel temperature than
the powder prepared by solid state reaction besides showing much lower magnetic susceptibility at low temperatures.
Dedicated to Professor C N R Rao on his 70th birthday 相似文献
97.
98.
本文研究了新席夫碱吡哆醛缩邻氨基酚的合成及其分析应用,提出了钒(V)的分光光度测定法,该法简便,灵敏,选择性好。 相似文献
99.
文中用MNDO方法研究了三甲基膦和环氧乙烷加成产物裂解反应机理 相似文献
100.
K. M. A. Salam Hidekazu Konishi Masahiro Mizuno Hisashi Fukuda Shigeru Nomura 《Applied Surface Science》2002,190(1-4):88-95
Polycrystalline (1−x)Ta2O5−xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5−xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm. 相似文献